^etnl-donductoi ^products., one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 repetitive avalanche and dv/dt rated hexfet?transistors thru-hole (to-204aa/ae) product summary part number IRF340 bvdss 400v rds(on) 0.55q id ida IRF340 400v, n-channel features: ? repetitive avalanche ratings ? dynamic dv/dt rating ? hermetically sealed ? simple drive requirements ? ease of paralleling absolute maximum ratings id @ vgs = ov, tc = 25c id @ vgs - ov, tc = iooc idm pd @ tc = 25c vgs has iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current cd max. power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy ? avalanche current ? repetitive avalanche energy cd peak diode recovery dv/dt operating junction storage temperature range lead temperature weight 10 6.0 40 125 1.0 20 5.7 10 - 4.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 1 1.5(typical) units a w w/c v mj a mj v/ns c g nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF340 electrical characteristics @ tj = 25c (unless otherwise specified) bvoss abvdss/atj rds(on) vgs(th) gfs 'dss igss igss g qrs qgd kl(on) tr 15v, ids = 6-oa? vos=32ov, vgs=ov vds ^ 320v vgs = ov, tj = 125c vgs -2ov vgs = -2ov vgs= iov, id=!oa vds = 200v vdd =2oov, id =ioa, rg =9. in measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) vgs = ov, vds = 25v f = l.omhz source-drain diode ratings and characteristics is ism vsd trr qrr ton parameter continuous source current (body diode) pulse source current (body diode) cd diode forward voltage reverse recovery time reverse recovery charge forward turn-on time min ? ? ? ? typ ? ? ? ? max 10 40 1.5 600 5.6 units a v ns uc test conditions tj = 25c, is = 10a, vgs =" ov ? tj -- 25c, if = 10a, di/dt < looa/ns vdd ^ sov ? intrinsic turn-on time is negligible. turn-on speed is substantially controlled by ls + ld. thermal resistance rthjc rthja parameter junction to case junction to ambient min ? ? typ ? ? max 1.0 30 units c/w test conditions typical socket mount
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